Field-Effect Transistor Based on 2D Microcrystalline MoS(2) Film Grown by Sulfurization of Atomically Layer Deposited MoO(3)

Atomically thin molybdenum disulfide (MoS(2)) is a promising channel material for next-generation thin-body field-effect transistors (FETs), which makes the development of methods allowing for its controllable synthesis over a large area an essential task. Currently, one of the cost-effective ways o...

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Detalles Bibliográficos
Autores principales: Zabrosaev, Ivan V., Kozodaev, Maxim G., Romanov, Roman I., Chernikova, Anna G., Mishra, Prabhash, Doroshina, Natalia V., Arsenin, Aleksey V., Volkov, Valentyn S., Koroleva, Alexandra A., Markeev, Andrey M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9565359/
https://www.ncbi.nlm.nih.gov/pubmed/36234390
http://dx.doi.org/10.3390/nano12193262

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9565359/
https://www.ncbi.nlm.nih.gov/pubmed/36234390
http://dx.doi.org/10.3390/nano12193262

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