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Mathematical Modeling of Drain Current Estimation in a CSDG MOSFET, Based on La(2)O(3) Oxide Layer with Fabrication—A Nanomaterial Approach
In this work, three-dimensional modeling of the surface potential along the cylindrical surrounding double-gate (CSDG) MOSFET is proposed. The derived surface potential is used to predict the values of electron mobility along the length of the device, thereby deriving the drain current equation at t...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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MDPI
2022
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9565492/ https://www.ncbi.nlm.nih.gov/pubmed/36234508 http://dx.doi.org/10.3390/nano12193374 |