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Mathematical Modeling of Drain Current Estimation in a CSDG MOSFET, Based on La(2)O(3) Oxide Layer with Fabrication—A Nanomaterial Approach
In this work, three-dimensional modeling of the surface potential along the cylindrical surrounding double-gate (CSDG) MOSFET is proposed. The derived surface potential is used to predict the values of electron mobility along the length of the device, thereby deriving the drain current equation at t...
Autores principales: | , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9565492/ https://www.ncbi.nlm.nih.gov/pubmed/36234508 http://dx.doi.org/10.3390/nano12193374 |
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author | Gowthaman, Naveenbalaji Srivastava, Viranjay M. |
author_facet | Gowthaman, Naveenbalaji Srivastava, Viranjay M. |
author_sort | Gowthaman, Naveenbalaji |
collection | PubMed |
description | In this work, three-dimensional modeling of the surface potential along the cylindrical surrounding double-gate (CSDG) MOSFET is proposed. The derived surface potential is used to predict the values of electron mobility along the length of the device, thereby deriving the drain current equation at the end of the device. The expressions are used for modeling the symmetric doped and undoped channel CSDG MOSFET device. This model uses Pao-Sah’s double integral to derive the current equation for the concentric cylindrical structure of the CSDG MOSFET. The three-dimensional surface potential estimation is performed analytically for doped and undoped device parameters. The maximum oxidant concentration of the oxide layer is observed to be 4.37 × 10(16) cm(−3) of the thickness of 0.82 nm for (100) and 3.90 × 10(16) cm(−3) of the thickness of 0.96 nm for (111) for dry oxidation, and 2.56 × 10(19) cm(−3) of thickness 0.33 nm for (100) and 2.11 × 10(19) cm(−3) of thickness 0.49 nm for (111) for wet oxidation environment conditions. Being an extensive analytical approach, the drain current serves the purpose of electron concentration explicitly inside the concentric cylindrical structures. The behavior of the device is analyzed for various threshold conditions of the gate voltage and other parameters. |
format | Online Article Text |
id | pubmed-9565492 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2022 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-95654922022-10-15 Mathematical Modeling of Drain Current Estimation in a CSDG MOSFET, Based on La(2)O(3) Oxide Layer with Fabrication—A Nanomaterial Approach Gowthaman, Naveenbalaji Srivastava, Viranjay M. Nanomaterials (Basel) Article In this work, three-dimensional modeling of the surface potential along the cylindrical surrounding double-gate (CSDG) MOSFET is proposed. The derived surface potential is used to predict the values of electron mobility along the length of the device, thereby deriving the drain current equation at the end of the device. The expressions are used for modeling the symmetric doped and undoped channel CSDG MOSFET device. This model uses Pao-Sah’s double integral to derive the current equation for the concentric cylindrical structure of the CSDG MOSFET. The three-dimensional surface potential estimation is performed analytically for doped and undoped device parameters. The maximum oxidant concentration of the oxide layer is observed to be 4.37 × 10(16) cm(−3) of the thickness of 0.82 nm for (100) and 3.90 × 10(16) cm(−3) of the thickness of 0.96 nm for (111) for dry oxidation, and 2.56 × 10(19) cm(−3) of thickness 0.33 nm for (100) and 2.11 × 10(19) cm(−3) of thickness 0.49 nm for (111) for wet oxidation environment conditions. Being an extensive analytical approach, the drain current serves the purpose of electron concentration explicitly inside the concentric cylindrical structures. The behavior of the device is analyzed for various threshold conditions of the gate voltage and other parameters. MDPI 2022-09-27 /pmc/articles/PMC9565492/ /pubmed/36234508 http://dx.doi.org/10.3390/nano12193374 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Gowthaman, Naveenbalaji Srivastava, Viranjay M. Mathematical Modeling of Drain Current Estimation in a CSDG MOSFET, Based on La(2)O(3) Oxide Layer with Fabrication—A Nanomaterial Approach |
title | Mathematical Modeling of Drain Current Estimation in a CSDG MOSFET, Based on La(2)O(3) Oxide Layer with Fabrication—A Nanomaterial Approach |
title_full | Mathematical Modeling of Drain Current Estimation in a CSDG MOSFET, Based on La(2)O(3) Oxide Layer with Fabrication—A Nanomaterial Approach |
title_fullStr | Mathematical Modeling of Drain Current Estimation in a CSDG MOSFET, Based on La(2)O(3) Oxide Layer with Fabrication—A Nanomaterial Approach |
title_full_unstemmed | Mathematical Modeling of Drain Current Estimation in a CSDG MOSFET, Based on La(2)O(3) Oxide Layer with Fabrication—A Nanomaterial Approach |
title_short | Mathematical Modeling of Drain Current Estimation in a CSDG MOSFET, Based on La(2)O(3) Oxide Layer with Fabrication—A Nanomaterial Approach |
title_sort | mathematical modeling of drain current estimation in a csdg mosfet, based on la(2)o(3) oxide layer with fabrication—a nanomaterial approach |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9565492/ https://www.ncbi.nlm.nih.gov/pubmed/36234508 http://dx.doi.org/10.3390/nano12193374 |
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