Cargando…

Mathematical Modeling of Drain Current Estimation in a CSDG MOSFET, Based on La(2)O(3) Oxide Layer with Fabrication—A Nanomaterial Approach

In this work, three-dimensional modeling of the surface potential along the cylindrical surrounding double-gate (CSDG) MOSFET is proposed. The derived surface potential is used to predict the values of electron mobility along the length of the device, thereby deriving the drain current equation at t...

Descripción completa

Detalles Bibliográficos
Autores principales:	Gowthaman, Naveenbalaji, Srivastava, Viranjay M.
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2022
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9565492/ https://www.ncbi.nlm.nih.gov/pubmed/36234508 http://dx.doi.org/10.3390/nano12193374

Ejemplares similares

Design and Analysis of Gallium Arsenide-Based Nanowire Using Coupled Non-Equilibrium Green Function for RF Hybrid Applications
por: Paramasivam, Pattunnarajam, et al.
Publicado: (2023)

MOSFET technologies for double-pole four-throw radio-frequency switch
por: Srivastava, Viranjay M, et al.
Publicado: (2014)

Drain Current Modulation of a Single Drain MOSFET by Lorentz Force for Magnetic Sensing Application
por: Chatterjee, Prasenjit, et al.
Publicado: (2016)

Testing and Analysis of MOSFET-Based Absorber Integrated Antenna for 5G/WiMAX/WLAN Applications
por: Omoru, Elliot O., et al.
Publicado: (2022)

Design Optimization and Characterization with Fabrication of Nanomaterials-Based Photo Diode Cell for Subretinal Implant Application
por: Moorthy, Vijai M., et al.
Publicado: (2023)

Characterization and Modeling of Gigarad-TID-Induced Drain Leakage Current of 28-nm Bulk MOSFETs
por: Zhang, Chun-Min, et al.
Publicado: (2018)

Device Modelling and Optimization of Nanomaterial-Based Planar Heterojunction Solar Cell (by Varying the Device Dimensions and Material Parameters)
por: Moorthy, Vijai Meyyappan, et al.
Publicado: (2022)

Normally-off β-Ga(2)O(3) MOSFET with an Epitaxial Drift Layer
por: Jang, Chan-Hee, et al.
Publicado: (2022)

A quasi-ballistic drain current, charge and capacitance model with positional carrier scattering dependency valid for symmetric DG MOSFETs in nanoscale regime
por: Murnal, Vyas R., et al.
Publicado: (2019)

Device Modeling of Organic Photovoltaic Cells with Traditional and Inverted Cells Using s-SWCNT:C(60) as Active Layer
por: Moorthy, Vijai M., et al.
Publicado: (2022)

Design and analysis of IGZO thin film transistor for AMOLED pixel circuit using double-gate tri active layer channel
por: Dargar, Shashi K., et al.
Publicado: (2019)

Leakage current and defect characterization of short channel mosfets
por: Roll, Guntrade
Publicado: (2012)

MOSFETs : properties, preparations and performance /
Publicado: (2008)

Fabrication and Characteristics of an nc-Si/c-Si Heterojunction MOSFETs Pressure Sensor
por: Zhao, Xiaofeng, et al.
Publicado: (2012)

SiC Heterojunction Trench MOSFET with a Buried P-Type Pillar for the Low Gate-Drain Charge and Switching Loss
por: Ran, Shenglong, et al.
Publicado: (2022)

Power MOSFETS : theory and applications /
por: Grant, Duncan Andrew
Publicado: (1989)

Strain-engineered MOSFETs
por: Maiti, CK, et al.
Publicado: (2012)

Strain-Engineered MOSFETs
por: Maiti, CK
Publicado: (2018)

Understanding the Role of Temperature and Drain Current Stress in InSnZnO TFTs with Various Active Layer Thicknesses
por: Wang, Dapeng, et al.
Publicado: (2020)

150–200 V Split-Gate Trench Power MOSFETs with Multiple Epitaxial Layers
por: Chien, Feng-Tso, et al.
Publicado: (2020)

Current Transport Mechanism for Heavy-Ion Degraded SiC MOSFETs
por: Martinella, C, et al.
Publicado: (2019)

Nanoscale MOSFET as a Potential Room-Temperature Quantum Current Source
por: Cheung, Kin P., et al.
Publicado: (2020)

Ge pMOSFETs with GeO(x) Passivation Formed by Ozone and Plasma Post Oxidation
por: Xu, Yang, et al.
Publicado: (2019)

Heterogeneous CMOS Integration of InGaAs-OI nMOSFETs and Ge pMOSFETs Based on Dual-Gate Oxide Technique
por: Tang, Xiaoyu, et al.
Publicado: (2022)

Unified Model of Shot Noise in the Tunneling Current in Sub-10 nm MOSFETs
por: Lee, Jonghwan
Publicado: (2021)

Analysis and design of MOSFETs : modeling, simulation, and parameter extraction /
por: Liou, Juin J.
Publicado: (1998)

Seismic Performance of Drained Piles in Layered Soils
por: Yang, Yaohui, et al.
Publicado: (2023)

Mathematical estimation of half‐value layer thicknesses
por: Omoumi, Farid H., et al.
Publicado: (2021)

Drain Current Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors with Different Active Layer Thicknesses
por: Wang, Dapeng, et al.
Publicado: (2018)

Analytical Model for the Channel Maximum Temperature in Ga(2)O(3) MOSFETs
por: Jia, Xiaole, et al.
Publicado: (2021)

Mosfet modeling for VLSI simulation : theory and practice /
por: Arora, N. (Narain), 1943-
Publicado: (2007)

Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS(2) MOSFET with an AlN Interfacial Layer
por: Qian, Qingkai, et al.
Publicado: (2016)

Compact MOSFET models for VLSI design /
por: Bhattacharyya, A. B. (Amalendu Bhushan)
Publicado: (2009)

Compact MOSFET models for VLSI design
por: Bhattacharyya, A B
Publicado: (2009)

Electron Gun Beam Extraction with MOSFETS
por: Niell, F
Publicado: (1999)

SEE Testing on commercial power MOSFETs
por: Fernández-Martínez, Pablo, et al.
Publicado: (2020)

MOSFET-based HTS flux pump
por: Jurčo, Róbert, et al.
Publicado: (2023)

Measurement and comparison of skin dose using OneDose MOSFET and Mobile MOSFET for patients with acute lymphoblastic leukemia
por: Mattar, Essam H., et al.
Publicado: (2011)

Integrating a Soft Body Diode in the Super-Junction MOSFET by Using an n(−)/n(+)-Buffer Layer
por: Lin, Zhi, et al.
Publicado: (2022)

Current Update of Collagen Nanomaterials—Fabrication, Characterisation and Its Applications: A Review
por: Lo, Samantha, et al.
Publicado: (2021)

Cannot write session to /tmp/vufind_sessions/sess_nk5j3n8kg10eaf67sfkipgpctg