A New Approach to Modeling Ultrashort Channel Ballistic Nanowire GAA MOSFETs

We propose a numerical compact model for describing the drain current in ballistic mode by using an expression to represent the transmission coefficients for all operating regions. This model is based on our previous study of an analytic compact model for the subthreshold region in which the DIBL an...

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Detalles Bibliográficos
Autores principales: Cheng, He, Yang, Zhijia, Zhang, Chao, Xie, Chuang, Liu, Tiefeng, Wang, Jian, Zhang, Zhipeng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9565607/
https://www.ncbi.nlm.nih.gov/pubmed/36234526
http://dx.doi.org/10.3390/nano12193401

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9565607/
https://www.ncbi.nlm.nih.gov/pubmed/36234526
http://dx.doi.org/10.3390/nano12193401

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