A New Approach to Modeling Ultrashort Channel Ballistic Nanowire GAA MOSFETs

We propose a numerical compact model for describing the drain current in ballistic mode by using an expression to represent the transmission coefficients for all operating regions. This model is based on our previous study of an analytic compact model for the subthreshold region in which the DIBL an...

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Autores principales: Cheng, He, Yang, Zhijia, Zhang, Chao, Xie, Chuang, Liu, Tiefeng, Wang, Jian, Zhang, Zhipeng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9565607/
https://www.ncbi.nlm.nih.gov/pubmed/36234526
http://dx.doi.org/10.3390/nano12193401
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author Cheng, He
Yang, Zhijia
Zhang, Chao
Xie, Chuang
Liu, Tiefeng
Wang, Jian
Zhang, Zhipeng
author_facet Cheng, He
Yang, Zhijia
Zhang, Chao
Xie, Chuang
Liu, Tiefeng
Wang, Jian
Zhang, Zhipeng
author_sort Cheng, He
collection PubMed
description We propose a numerical compact model for describing the drain current in ballistic mode by using an expression to represent the transmission coefficients for all operating regions. This model is based on our previous study of an analytic compact model for the subthreshold region in which the DIBL and source-to-drain tunneling effects were both taken into account. This paper introduces an approach to establishing the smoothing function for expressing the critical parameters in the model’s overall operating regions. The resulting compact model was tested in a TCAD NEGF simulation, demonstrating good consistency.
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spelling pubmed-95656072022-10-15 A New Approach to Modeling Ultrashort Channel Ballistic Nanowire GAA MOSFETs Cheng, He Yang, Zhijia Zhang, Chao Xie, Chuang Liu, Tiefeng Wang, Jian Zhang, Zhipeng Nanomaterials (Basel) Article We propose a numerical compact model for describing the drain current in ballistic mode by using an expression to represent the transmission coefficients for all operating regions. This model is based on our previous study of an analytic compact model for the subthreshold region in which the DIBL and source-to-drain tunneling effects were both taken into account. This paper introduces an approach to establishing the smoothing function for expressing the critical parameters in the model’s overall operating regions. The resulting compact model was tested in a TCAD NEGF simulation, demonstrating good consistency. MDPI 2022-09-28 /pmc/articles/PMC9565607/ /pubmed/36234526 http://dx.doi.org/10.3390/nano12193401 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Cheng, He
Yang, Zhijia
Zhang, Chao
Xie, Chuang
Liu, Tiefeng
Wang, Jian
Zhang, Zhipeng
A New Approach to Modeling Ultrashort Channel Ballistic Nanowire GAA MOSFETs
title A New Approach to Modeling Ultrashort Channel Ballistic Nanowire GAA MOSFETs
title_full A New Approach to Modeling Ultrashort Channel Ballistic Nanowire GAA MOSFETs
title_fullStr A New Approach to Modeling Ultrashort Channel Ballistic Nanowire GAA MOSFETs
title_full_unstemmed A New Approach to Modeling Ultrashort Channel Ballistic Nanowire GAA MOSFETs
title_short A New Approach to Modeling Ultrashort Channel Ballistic Nanowire GAA MOSFETs
title_sort new approach to modeling ultrashort channel ballistic nanowire gaa mosfets
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9565607/
https://www.ncbi.nlm.nih.gov/pubmed/36234526
http://dx.doi.org/10.3390/nano12193401
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