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A New Approach to Modeling Ultrashort Channel Ballistic Nanowire GAA MOSFETs
We propose a numerical compact model for describing the drain current in ballistic mode by using an expression to represent the transmission coefficients for all operating regions. This model is based on our previous study of an analytic compact model for the subthreshold region in which the DIBL an...
| Autores principales: | , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9565607/ https://www.ncbi.nlm.nih.gov/pubmed/36234526 http://dx.doi.org/10.3390/nano12193401 |