Sensitivity of Inner Spacer Thickness Variations for Sub-3-nm Node Silicon Nanosheet Field-Effect Transistors

The inner spacer thickness (T(IS)) variations in sub-3-nm, node 3-stacked, nanosheet field-effect transistors (NSFETs) were investigated using computer-aided design simulation technology. Inner spacer formation requires a high selectivity of SiGe to Si, which causes inevitable T(IS) variation (ΔT(IS...

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Detalles Bibliográficos
Autores principales: Lee, Sanguk, Jeong, Jinsu, Yoon, Jun-Sik, Lee, Seunghwan, Lee, Junjong, Lim, Jaewan, Baek, Rock-Hyun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9565639/
https://www.ncbi.nlm.nih.gov/pubmed/36234478
http://dx.doi.org/10.3390/nano12193349

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9565639/
https://www.ncbi.nlm.nih.gov/pubmed/36234478
http://dx.doi.org/10.3390/nano12193349

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