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Enhancement of Resistive and Synaptic Characteristics in Tantalum Oxide-Based RRAM by Nitrogen Doping
Resistive random–access memory (RRAM) for neuromorphic systems has received significant attention because of its advantages, such as low power consumption, high–density structure, and high–speed switching. However, variability occurs because of the stochastic nature of conductive filaments (CFs), pr...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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MDPI
2022
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9565720/ https://www.ncbi.nlm.nih.gov/pubmed/36234461 http://dx.doi.org/10.3390/nano12193334 |