Cargando…

Enhancement of Resistive and Synaptic Characteristics in Tantalum Oxide-Based RRAM by Nitrogen Doping

Resistive random–access memory (RRAM) for neuromorphic systems has received significant attention because of its advantages, such as low power consumption, high–density structure, and high–speed switching. However, variability occurs because of the stochastic nature of conductive filaments (CFs), pr...

Descripción completa

Detalles Bibliográficos
Autores principales: Kim, Doohyung, Kim, Jihyung, Kim, Sungjun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9565720/
https://www.ncbi.nlm.nih.gov/pubmed/36234461
http://dx.doi.org/10.3390/nano12193334
_version_ 1784808959709806592
author Kim, Doohyung
Kim, Jihyung
Kim, Sungjun
author_facet Kim, Doohyung
Kim, Jihyung
Kim, Sungjun
author_sort Kim, Doohyung
collection PubMed
description Resistive random–access memory (RRAM) for neuromorphic systems has received significant attention because of its advantages, such as low power consumption, high–density structure, and high–speed switching. However, variability occurs because of the stochastic nature of conductive filaments (CFs), producing inaccurate results in neuromorphic systems. In this article, we fabricated nitrogen–doped tantalum oxide (TaO(x):N)–based resistive switching (RS) memory. The TaO(x):N–based device significantly enhanced the RS characteristics compared with a TaO(x)–based device in terms of resistance variability. It achieved lower device–to–device variability in both low-resistance state (LRS) and high–resistance state (HRS), 8.7% and 48.3% rather than undoped device of 35% and 60.7%. Furthermore, the N–doped device showed a centralized set distribution with a 9.4% variability, while the undoped device exhibited a wider distribution with a 17.2% variability. Concerning pulse endurance, nitrogen doping prevented durability from being degraded. Finally, for synaptic properties, the potentiation and depression of the TaO(x):N–based device exhibited a more stable cycle–to–cycle variability of 4.9%, compared with only 13.7% for the TaO(x)–based device. The proposed nitrogen–doped device is more suitable for neuromorphic systems because, unlike the undoped device, uniformity of conductance can be obtained.
format Online
Article
Text
id pubmed-9565720
institution National Center for Biotechnology Information
language English
publishDate 2022
publisher MDPI
record_format MEDLINE/PubMed
spelling pubmed-95657202022-10-15 Enhancement of Resistive and Synaptic Characteristics in Tantalum Oxide-Based RRAM by Nitrogen Doping Kim, Doohyung Kim, Jihyung Kim, Sungjun Nanomaterials (Basel) Article Resistive random–access memory (RRAM) for neuromorphic systems has received significant attention because of its advantages, such as low power consumption, high–density structure, and high–speed switching. However, variability occurs because of the stochastic nature of conductive filaments (CFs), producing inaccurate results in neuromorphic systems. In this article, we fabricated nitrogen–doped tantalum oxide (TaO(x):N)–based resistive switching (RS) memory. The TaO(x):N–based device significantly enhanced the RS characteristics compared with a TaO(x)–based device in terms of resistance variability. It achieved lower device–to–device variability in both low-resistance state (LRS) and high–resistance state (HRS), 8.7% and 48.3% rather than undoped device of 35% and 60.7%. Furthermore, the N–doped device showed a centralized set distribution with a 9.4% variability, while the undoped device exhibited a wider distribution with a 17.2% variability. Concerning pulse endurance, nitrogen doping prevented durability from being degraded. Finally, for synaptic properties, the potentiation and depression of the TaO(x):N–based device exhibited a more stable cycle–to–cycle variability of 4.9%, compared with only 13.7% for the TaO(x)–based device. The proposed nitrogen–doped device is more suitable for neuromorphic systems because, unlike the undoped device, uniformity of conductance can be obtained. MDPI 2022-09-24 /pmc/articles/PMC9565720/ /pubmed/36234461 http://dx.doi.org/10.3390/nano12193334 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Kim, Doohyung
Kim, Jihyung
Kim, Sungjun
Enhancement of Resistive and Synaptic Characteristics in Tantalum Oxide-Based RRAM by Nitrogen Doping
title Enhancement of Resistive and Synaptic Characteristics in Tantalum Oxide-Based RRAM by Nitrogen Doping
title_full Enhancement of Resistive and Synaptic Characteristics in Tantalum Oxide-Based RRAM by Nitrogen Doping
title_fullStr Enhancement of Resistive and Synaptic Characteristics in Tantalum Oxide-Based RRAM by Nitrogen Doping
title_full_unstemmed Enhancement of Resistive and Synaptic Characteristics in Tantalum Oxide-Based RRAM by Nitrogen Doping
title_short Enhancement of Resistive and Synaptic Characteristics in Tantalum Oxide-Based RRAM by Nitrogen Doping
title_sort enhancement of resistive and synaptic characteristics in tantalum oxide-based rram by nitrogen doping
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9565720/
https://www.ncbi.nlm.nih.gov/pubmed/36234461
http://dx.doi.org/10.3390/nano12193334
work_keys_str_mv AT kimdoohyung enhancementofresistiveandsynapticcharacteristicsintantalumoxidebasedrrambynitrogendoping
AT kimjihyung enhancementofresistiveandsynapticcharacteristicsintantalumoxidebasedrrambynitrogendoping
AT kimsungjun enhancementofresistiveandsynapticcharacteristicsintantalumoxidebasedrrambynitrogendoping