Ion Drift and Polarization in Thin SiO(2) and HfO(2) Layers Inserted in Silicon on Sapphire

To reduce the built-in positive charge value at the silicon-on-sapphire (SOS) phase border obtained by bonding and a hydrogen transfer, thermal silicon oxide (SiO(2)) layers with a thickness of 50–310 nm and HfO(2) layers with a thickness of 20 nm were inserted between silicon and sapphire by plasma...

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Detalles Bibliográficos
Autores principales: Popov, Vladimir P., Antonov, Valentin A., Miakonkikh, Andrey V., Rudenko, Konstantin V.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9565775/
https://www.ncbi.nlm.nih.gov/pubmed/36234528
http://dx.doi.org/10.3390/nano12193394

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9565775/
https://www.ncbi.nlm.nih.gov/pubmed/36234528
http://dx.doi.org/10.3390/nano12193394

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