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Ion Drift and Polarization in Thin SiO(2) and HfO(2) Layers Inserted in Silicon on Sapphire
To reduce the built-in positive charge value at the silicon-on-sapphire (SOS) phase border obtained by bonding and a hydrogen transfer, thermal silicon oxide (SiO(2)) layers with a thickness of 50–310 nm and HfO(2) layers with a thickness of 20 nm were inserted between silicon and sapphire by plasma...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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MDPI
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9565775/ https://www.ncbi.nlm.nih.gov/pubmed/36234528 http://dx.doi.org/10.3390/nano12193394 |