Design of a Capacitorless DRAM Based on a Polycrystalline-Silicon Dual-Gate MOSFET with a Fin-Shaped Structure

In this study, a capacitorless one-transistor dynamic random-access memory (1T-DRAM) cell based on a polycrystalline silicon dual-gate metal-oxide-semiconductor field-effect transistor with a fin-shaped structure was optimized and analyzed using technology computer-aided design simulation. The propo...

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Detalles Bibliográficos
Autores principales: An, Hee Dae, Lee, Sang Ho, Park, Jin, Min, So Ra, Kim, Geon Uk, Yoon, Young Jun, Seo, Jae Hwa, Cho, Min Su, Jang, Jaewon, Bae, Jin-Hyuk, Lee, Sin-Hyung, Kang, In Man
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9565816/
https://www.ncbi.nlm.nih.gov/pubmed/36234653
http://dx.doi.org/10.3390/nano12193526

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9565816/
https://www.ncbi.nlm.nih.gov/pubmed/36234653
http://dx.doi.org/10.3390/nano12193526

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