Towards the Growth of Hexagonal Boron Nitride on Ge(001)/Si Substrates by Chemical Vapor Deposition

The growth of hexagonal boron nitride (hBN) on epitaxial Ge(001)/Si substrates via high-vacuum chemical vapor deposition from borazine is investigated for the first time in a systematic manner. The influences of the process pressure and growth temperature in the range of 10(−7)–10(−3) mbar and 900–9...

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Detalles Bibliográficos
Autores principales: Franck, Max, Dabrowski, Jaroslaw, Schubert, Markus Andreas, Wenger, Christian, Lukosius, Mindaugas
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9565924/
https://www.ncbi.nlm.nih.gov/pubmed/36234388
http://dx.doi.org/10.3390/nano12193260

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9565924/
https://www.ncbi.nlm.nih.gov/pubmed/36234388
http://dx.doi.org/10.3390/nano12193260

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