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Towards the Growth of Hexagonal Boron Nitride on Ge(001)/Si Substrates by Chemical Vapor Deposition

The growth of hexagonal boron nitride (hBN) on epitaxial Ge(001)/Si substrates via high-vacuum chemical vapor deposition from borazine is investigated for the first time in a systematic manner. The influences of the process pressure and growth temperature in the range of 10(−7)–10(−3) mbar and 900–9...

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Detalles Bibliográficos
Autores principales:	Franck, Max, Dabrowski, Jaroslaw, Schubert, Markus Andreas, Wenger, Christian, Lukosius, Mindaugas
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2022
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9565924/ https://www.ncbi.nlm.nih.gov/pubmed/36234388 http://dx.doi.org/10.3390/nano12193260

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