Broadband infrared study of pressure-tunable Fano resonance and metallization transition in 2H-[Formula: see text]

High pressure is a proven effective tool for modulating inter-layer interactions in semiconducting transition metal dichalcogenides, which leads to significant band structure changes. Here, we present an extended infrared study of the pressure-induced semiconductor-to-metal transition in 2H-[Formula...

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Detalles Bibliográficos
Autores principales: Stellino, E., Capitani, F., Ripanti, F., Verseils, M., Petrillo, C., Dore, P., Postorino, P.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9569381/
https://www.ncbi.nlm.nih.gov/pubmed/36243735
http://dx.doi.org/10.1038/s41598-022-22089-0

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9569381/
https://www.ncbi.nlm.nih.gov/pubmed/36243735
http://dx.doi.org/10.1038/s41598-022-22089-0

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