Revisiting the Modeling of the Conversion Gain of CMOS Image Sensors with a New Stochastic Approach

A stochastic model for characterizing the conversion gain of Active Pixel Complementary metal–oxide–semiconductor (CMOS) image sensors (APS) with at least four transistors is presented. This model, based on the fundamental principles of electronic noise, may provide a reliable calibration of the gai...

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Detalles Bibliográficos
Autores principales: Cherniak, Gil, Nemirovsky, Amikam, Nemirovsky, Yael
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9570612/
https://www.ncbi.nlm.nih.gov/pubmed/36236717
http://dx.doi.org/10.3390/s22197620

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9570612/
https://www.ncbi.nlm.nih.gov/pubmed/36236717
http://dx.doi.org/10.3390/s22197620

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