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Revisiting the Modeling of the Conversion Gain of CMOS Image Sensors with a New Stochastic Approach
A stochastic model for characterizing the conversion gain of Active Pixel Complementary metal–oxide–semiconductor (CMOS) image sensors (APS) with at least four transistors is presented. This model, based on the fundamental principles of electronic noise, may provide a reliable calibration of the gai...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9570612/ https://www.ncbi.nlm.nih.gov/pubmed/36236717 http://dx.doi.org/10.3390/s22197620 |