Investigation on Atomic Bonding Structure of Solution-Processed Indium-Zinc-Oxide Semiconductors According to Doped Indium Content and Its Effects on the Transistor Performance

The atomic composition ratio of solution-processed oxide semiconductors is crucial in controlling the electrical performance of thin-film transistors (TFTs) because the crystallinity and defects of the random network structure of oxide semiconductors change critically with respect to the atomic comp...

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Detalles Bibliográficos
Autores principales: Kim, Dongwook, Lee, Hyeonju, Kim, Bokyung, Baang, Sungkeun, Ejderha, Kadir, Bae, Jin-Hyuk, Park, Jaehoon
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9570876/
https://www.ncbi.nlm.nih.gov/pubmed/36234102
http://dx.doi.org/10.3390/ma15196763

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9570876/
https://www.ncbi.nlm.nih.gov/pubmed/36234102
http://dx.doi.org/10.3390/ma15196763

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