Improved Electrical Characteristics of AlGaN/GaN High-Electron-Mobility Transistor with Al(2)O(3)/ZrO(2) Stacked Gate Dielectrics

A metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) is proposed based on using a Al(2)O(3)/ZrO(2) stacked layer on conventional AlGaN/GaN HEMT to suppress the gate leakage current, decrease flicker noise, increase high-frequency performance, improve power performance, and enhanc...

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Detalles Bibliográficos
Autores principales: Huang, Cheng-Yu, Mazumder, Soumen, Lin, Pu-Chou, Lee, Kuan-Wei, Wang, Yeong-Her
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9571027/
https://www.ncbi.nlm.nih.gov/pubmed/36234237
http://dx.doi.org/10.3390/ma15196895

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9571027/
https://www.ncbi.nlm.nih.gov/pubmed/36234237
http://dx.doi.org/10.3390/ma15196895

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