Selective Etching of Si versus Si(1−x)Ge(x) in Tetramethyl Ammonium Hydroxide Solutions with Surfactant

We investigated the selective etching of Si versus Si(1−x)Ge(x) with various Ge concentrations (x = 0.13, 0.21, 0.30, 0.44) in tetramethyl ammonium hydroxide (TMAH) solution. Our results show that the Si(1−x)Ge(x) with a higher Ge concentration was etched slower due to the reduction in the Si(Ge)–OH...

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Detalles Bibliográficos
Autores principales: Choi, Yongjoon, Cho, Choonghee, Yoon, Dongmin, Kang, Joosung, Kim, Jihye, Kim, So Young, Suh, Dong Chan, Ko, Dae-Hong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9571331/
https://www.ncbi.nlm.nih.gov/pubmed/36234259
http://dx.doi.org/10.3390/ma15196918

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9571331/
https://www.ncbi.nlm.nih.gov/pubmed/36234259
http://dx.doi.org/10.3390/ma15196918

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