Correction: Chen et al. New n-p Junction Floating Gate to Enhance the Operation Performance of a Semiconductor Memory Device. Materials 2022, 15, 3640

Detalles Bibliográficos
Autores principales: Chen, Yi-Yueh, Lin, Su-Jien, Chang, Shou-Yi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Correction
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9571785/
https://www.ncbi.nlm.nih.gov/pubmed/36234385
http://dx.doi.org/10.3390/ma15196738

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9571785/
https://www.ncbi.nlm.nih.gov/pubmed/36234385
http://dx.doi.org/10.3390/ma15196738

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