Cargando…
Correction: Chen et al. New n-p Junction Floating Gate to Enhance the Operation Performance of a Semiconductor Memory Device. Materials 2022, 15, 3640
| Autores principales: | , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2022
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9571785/ https://www.ncbi.nlm.nih.gov/pubmed/36234385 http://dx.doi.org/10.3390/ma15196738 |
| _version_ | 1784810450284707840 |
|---|---|
| author | Chen, Yi-Yueh Lin, Su-Jien Chang, Shou-Yi |
| author_facet | Chen, Yi-Yueh Lin, Su-Jien Chang, Shou-Yi |
| author_sort | Chen, Yi-Yueh |
| collection | PubMed |
| description | |
| format | Online Article Text |
| id | pubmed-9571785 |
| institution | National Center for Biotechnology Information |
| language | English |
| publishDate | 2022 |
| publisher | MDPI |
| record_format | MEDLINE/PubMed |
| spelling | pubmed-95717852022-10-17 Correction: Chen et al. New n-p Junction Floating Gate to Enhance the Operation Performance of a Semiconductor Memory Device. Materials 2022, 15, 3640 Chen, Yi-Yueh Lin, Su-Jien Chang, Shou-Yi Materials (Basel) Correction MDPI 2022-09-28 /pmc/articles/PMC9571785/ /pubmed/36234385 http://dx.doi.org/10.3390/ma15196738 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
| spellingShingle | Correction Chen, Yi-Yueh Lin, Su-Jien Chang, Shou-Yi Correction: Chen et al. New n-p Junction Floating Gate to Enhance the Operation Performance of a Semiconductor Memory Device. Materials 2022, 15, 3640 |
| title | Correction: Chen et al. New n-p Junction Floating Gate to Enhance the Operation Performance of a Semiconductor Memory Device. Materials 2022, 15, 3640 |
| title_full | Correction: Chen et al. New n-p Junction Floating Gate to Enhance the Operation Performance of a Semiconductor Memory Device. Materials 2022, 15, 3640 |
| title_fullStr | Correction: Chen et al. New n-p Junction Floating Gate to Enhance the Operation Performance of a Semiconductor Memory Device. Materials 2022, 15, 3640 |
| title_full_unstemmed | Correction: Chen et al. New n-p Junction Floating Gate to Enhance the Operation Performance of a Semiconductor Memory Device. Materials 2022, 15, 3640 |
| title_short | Correction: Chen et al. New n-p Junction Floating Gate to Enhance the Operation Performance of a Semiconductor Memory Device. Materials 2022, 15, 3640 |
| title_sort | correction: chen et al. new n-p junction floating gate to enhance the operation performance of a semiconductor memory device. materials 2022, 15, 3640 |
| topic | Correction |
| url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9571785/ https://www.ncbi.nlm.nih.gov/pubmed/36234385 http://dx.doi.org/10.3390/ma15196738 |
| work_keys_str_mv | AT chenyiyueh correctionchenetalnewnpjunctionfloatinggatetoenhancetheoperationperformanceofasemiconductormemorydevicematerials2022153640 AT linsujien correctionchenetalnewnpjunctionfloatinggatetoenhancetheoperationperformanceofasemiconductormemorydevicematerials2022153640 AT changshouyi correctionchenetalnewnpjunctionfloatinggatetoenhancetheoperationperformanceofasemiconductormemorydevicematerials2022153640 |