Study of Carrier Mobilities in 4H-SiC MOSFETS Using Hall Analysis

The channel conduction in 4H-SiC metal–oxide–semiconductor field effect transistors (MOSFETs) are highly impacted by charge trapping and scattering at the interface. Even though nitridation reduces the interface trap density, scattering still plays a crucial role in increasing the channel resistance...

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Detalles Bibliográficos
Autores principales: Das, Suman, Zheng, Yongju, Ahyi, Ayayi, Kuroda, Marcelo A., Dhar, Sarit
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9571812/
https://www.ncbi.nlm.nih.gov/pubmed/36234077
http://dx.doi.org/10.3390/ma15196736

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9571812/
https://www.ncbi.nlm.nih.gov/pubmed/36234077
http://dx.doi.org/10.3390/ma15196736

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