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Study of Carrier Mobilities in 4H-SiC MOSFETS Using Hall Analysis
The channel conduction in 4H-SiC metal–oxide–semiconductor field effect transistors (MOSFETs) are highly impacted by charge trapping and scattering at the interface. Even though nitridation reduces the interface trap density, scattering still plays a crucial role in increasing the channel resistance...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9571812/ https://www.ncbi.nlm.nih.gov/pubmed/36234077 http://dx.doi.org/10.3390/ma15196736 |