Improved Environment Stability of Y(2)O(3) RRAM Devices with Au Passivated Ag Top Electrodes

In this study, we fabricated sol-gel-processed Y(2)O(3)-based resistive random-access memory (RRAM) devices. The fabricated Y(2)O(3) RRAM devices exhibited conventional bipolar RRAM device characteristics and did not require the forming process. The long-term stability of the RRAM devices was invest...

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Detalles Bibliográficos
Autores principales: Kim, Hae-In, Lee, Taehun, Lee, Won-Yong, Kim, Kyoungdu, Bae, Jin-Hyuk, Kang, In-Man, Lee, Sin-Hyung, Kim, Kwangeun, Jang, Jaewon
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9572085/
https://www.ncbi.nlm.nih.gov/pubmed/36234198
http://dx.doi.org/10.3390/ma15196859

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9572085/
https://www.ncbi.nlm.nih.gov/pubmed/36234198
http://dx.doi.org/10.3390/ma15196859

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