Cargando…
Improved Environment Stability of Y(2)O(3) RRAM Devices with Au Passivated Ag Top Electrodes
In this study, we fabricated sol-gel-processed Y(2)O(3)-based resistive random-access memory (RRAM) devices. The fabricated Y(2)O(3) RRAM devices exhibited conventional bipolar RRAM device characteristics and did not require the forming process. The long-term stability of the RRAM devices was invest...
| Autores principales: | , , , , , , , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2022
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9572085/ https://www.ncbi.nlm.nih.gov/pubmed/36234198 http://dx.doi.org/10.3390/ma15196859 |