Relation between Ga Vacancies, Photoluminescence, and Growth Conditions of MOVPE-Prepared GaN Layers

A set of GaN layers prepared by metalorganic vapor phase epitaxy under different technological conditions (growth temperature carrier gas type and Ga precursor) were investigated using variable energy positron annihilation spectroscopy (VEPAS) to find a link between technological conditions, GaN lay...

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Detalles Bibliográficos
Autores principales: Hospodková, Alice, Čížek, Jakub, Hájek, František, Hubáček, Tomáš, Pangrác, Jiří, Dominec, Filip, Kuldová, Karla, Batysta, Jan, Liedke, Maciej O., Hirschmann, Eric, Butterling, Maik, Wagner, Andreas
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9572910/
https://www.ncbi.nlm.nih.gov/pubmed/36234257
http://dx.doi.org/10.3390/ma15196916

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9572910/
https://www.ncbi.nlm.nih.gov/pubmed/36234257
http://dx.doi.org/10.3390/ma15196916

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