A New Cell Topology for 4H-SiC Planar Power MOSFETs for High-Frequency Switching

A new cell topology named the dodecagonal (a polygon with twelve sides, short for Dod) cell is proposed to optimize the gate-to-drain capacitance ([Formula: see text]) and reduce the specific ON-resistance ([Formula: see text]) of 4H-SiC planar power MOSFETs. The Dod and the octagonal (Oct) cells ar...

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Detalles Bibliográficos
Autores principales: Zhu, Shengnan, Liu, Tianshi, Fan, Junchong, Salemi, Arash, White, Marvin H., Sheridan, David, Agarwal, Anant K.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Communication
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9572954/
https://www.ncbi.nlm.nih.gov/pubmed/36234032
http://dx.doi.org/10.3390/ma15196690

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9572954/
https://www.ncbi.nlm.nih.gov/pubmed/36234032
http://dx.doi.org/10.3390/ma15196690

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