A New Cell Topology for 4H-SiC Planar Power MOSFETs for High-Frequency Switching

A new cell topology named the dodecagonal (a polygon with twelve sides, short for Dod) cell is proposed to optimize the gate-to-drain capacitance ([Formula: see text]) and reduce the specific ON-resistance ([Formula: see text]) of 4H-SiC planar power MOSFETs. The Dod and the octagonal (Oct) cells ar...

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Detalles Bibliográficos
Autores principales: Zhu, Shengnan, Liu, Tianshi, Fan, Junchong, Salemi, Arash, White, Marvin H., Sheridan, David, Agarwal, Anant K.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Communication
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9572954/
https://www.ncbi.nlm.nih.gov/pubmed/36234032
http://dx.doi.org/10.3390/ma15196690
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author Zhu, Shengnan
Liu, Tianshi
Fan, Junchong
Salemi, Arash
White, Marvin H.
Sheridan, David
Agarwal, Anant K.
author_facet Zhu, Shengnan
Liu, Tianshi
Fan, Junchong
Salemi, Arash
White, Marvin H.
Sheridan, David
Agarwal, Anant K.
author_sort Zhu, Shengnan
collection PubMed
description A new cell topology named the dodecagonal (a polygon with twelve sides, short for Dod) cell is proposed to optimize the gate-to-drain capacitance ([Formula: see text]) and reduce the specific ON-resistance ([Formula: see text]) of 4H-SiC planar power MOSFETs. The Dod and the octagonal (Oct) cells are used in the layout design of the 650 V SiC MOSFETs in this work. The experimental results confirm that the Dod-cell MOSFET achieves a 2.2× lower [Formula: see text] , 2.1× smaller high-frequency figure of merit (HF-FOM), higher turn on/off dv/dt, and 29% less switching loss than the fabricated Oct-cell MOSFET. The results demonstrate that the Dod cell is an attractive candidate for high-frequency power applications.
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spelling pubmed-95729542022-10-17 A New Cell Topology for 4H-SiC Planar Power MOSFETs for High-Frequency Switching Zhu, Shengnan Liu, Tianshi Fan, Junchong Salemi, Arash White, Marvin H. Sheridan, David Agarwal, Anant K. Materials (Basel) Communication A new cell topology named the dodecagonal (a polygon with twelve sides, short for Dod) cell is proposed to optimize the gate-to-drain capacitance ([Formula: see text]) and reduce the specific ON-resistance ([Formula: see text]) of 4H-SiC planar power MOSFETs. The Dod and the octagonal (Oct) cells are used in the layout design of the 650 V SiC MOSFETs in this work. The experimental results confirm that the Dod-cell MOSFET achieves a 2.2× lower [Formula: see text] , 2.1× smaller high-frequency figure of merit (HF-FOM), higher turn on/off dv/dt, and 29% less switching loss than the fabricated Oct-cell MOSFET. The results demonstrate that the Dod cell is an attractive candidate for high-frequency power applications. MDPI 2022-09-27 /pmc/articles/PMC9572954/ /pubmed/36234032 http://dx.doi.org/10.3390/ma15196690 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Communication
Zhu, Shengnan
Liu, Tianshi
Fan, Junchong
Salemi, Arash
White, Marvin H.
Sheridan, David
Agarwal, Anant K.
A New Cell Topology for 4H-SiC Planar Power MOSFETs for High-Frequency Switching
title A New Cell Topology for 4H-SiC Planar Power MOSFETs for High-Frequency Switching
title_full A New Cell Topology for 4H-SiC Planar Power MOSFETs for High-Frequency Switching
title_fullStr A New Cell Topology for 4H-SiC Planar Power MOSFETs for High-Frequency Switching
title_full_unstemmed A New Cell Topology for 4H-SiC Planar Power MOSFETs for High-Frequency Switching
title_short A New Cell Topology for 4H-SiC Planar Power MOSFETs for High-Frequency Switching
title_sort new cell topology for 4h-sic planar power mosfets for high-frequency switching
topic Communication
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9572954/
https://www.ncbi.nlm.nih.gov/pubmed/36234032
http://dx.doi.org/10.3390/ma15196690
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