A Novel Terahertz Detector Based on Asymmetrical FET Array in 55-nm Standard CMOS Process

This paper reports a novel, one-dimensional dense array of asymmetrical metal-oxide-semiconductor field-effect-transistor (MOSFET) THz detector, which has been fabricated in GlobalFoundries 55-nm CMOS technology. Compared with other technologies, the Si-based complementary metal-oxide-semiconductor...

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Detalles Bibliográficos
Autores principales: Liu, Yaxuan, Zhang, Xin, Sun, Jingye, Tong, Ling, Kong, Lingbing, Deng, Tao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9573511/
https://www.ncbi.nlm.nih.gov/pubmed/36233918
http://dx.doi.org/10.3390/ma15196578

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9573511/
https://www.ncbi.nlm.nih.gov/pubmed/36233918
http://dx.doi.org/10.3390/ma15196578

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