OFF-State Leakage Suppression in Vertical Electron–Hole Bilayer TFET Using Dual-Metal Left-Gate and N(+)-Pocket

In this paper, an In(0.53)Ga(0.47)As electron–hole bilayer tunnel field-effect transistor (EHBTFET) with a dual-metal left-gate and an N(+)-pocket (DGNP-EHBTFET) is proposed and systematically studied by means of numerical simulation. Unlike traditional transverse EHBTFETs, the proposed DGNP-EHBTFET...

Descripción completa

Detalles Bibliográficos
Autores principales: Liu, Hu, Zhang, Wenting, Wang, Zaixing, Li, Yao, Zhang, Huawei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9573729/
https://www.ncbi.nlm.nih.gov/pubmed/36234264
http://dx.doi.org/10.3390/ma15196924

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9573729/
https://www.ncbi.nlm.nih.gov/pubmed/36234264
http://dx.doi.org/10.3390/ma15196924

Ejemplares similares