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OFF-State Leakage Suppression in Vertical Electron–Hole Bilayer TFET Using Dual-Metal Left-Gate and N(+)-Pocket

In this paper, an In(0.53)Ga(0.47)As electron–hole bilayer tunnel field-effect transistor (EHBTFET) with a dual-metal left-gate and an N(+)-pocket (DGNP-EHBTFET) is proposed and systematically studied by means of numerical simulation. Unlike traditional transverse EHBTFETs, the proposed DGNP-EHBTFET...

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Detalles Bibliográficos
Autores principales:	Liu, Hu, Zhang, Wenting, Wang, Zaixing, Li, Yao, Zhang, Huawei
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2022
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9573729/ https://www.ncbi.nlm.nih.gov/pubmed/36234264 http://dx.doi.org/10.3390/ma15196924

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