Coupling strategy between high-index and mid-index micro-metric waveguides for O-band applications

The integration of fast and power efficient electro-absorption modulators on silicon is of utmost importance for a wide range of applications. To date, Franz-Keldysh modulators formed of bulk Ge or GeSi have been widely adopted due to the simplicity of integration required by the modulation scheme....

Descripción completa

Detalles Bibliográficos
Autores principales: Skandalos, Ilias, Domínguez Bucio, Thalía, Mastronardi, Lorenzo, Rutirawut, Teerapat, Gardes, Frederic Y.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9581976/
https://www.ncbi.nlm.nih.gov/pubmed/36261498
http://dx.doi.org/10.1038/s41598-022-22456-x

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9581976/
https://www.ncbi.nlm.nih.gov/pubmed/36261498
http://dx.doi.org/10.1038/s41598-022-22456-x

Ejemplares similares