State-of-the-Art β-Ga(2)O(3) Field-Effect Transistors for Power Electronics

[Image: see text] Due to the emergence of electric vehicles, power electronics have become the new focal point of research. Compared to commercialized semiconductors, such as Si, GaN, and SiC, power devices based on β-Ga(2)O(3) are capable of handling high voltages in smaller dimensions and with hig...

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Detalles Bibliográficos
Autores principales: Liu, An-Chen, Hsieh, Chi-Hsiang, Langpoklakpam, Catherine, Singh, Konthoujam James, Lee, Wen-Chung, Hsiao, Yi-Kai, Horng, Ray-Hua, Kuo, Hao-Chung, Tu, Chang-Ching
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2022
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9583091/
https://www.ncbi.nlm.nih.gov/pubmed/36278089
http://dx.doi.org/10.1021/acsomega.2c03345

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9583091/
https://www.ncbi.nlm.nih.gov/pubmed/36278089
http://dx.doi.org/10.1021/acsomega.2c03345

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