Polarization-Type Potential-Induced Degradation in Front-Emitter p-Type and n-Type Crystalline Silicon Solar Cells

[Image: see text] For SiO(2) layers underneath the SiN(x) antireflection/passivation layers of front-emitter p-type c-Si solar cells, this paper presents an investigation into their effects on polarization-type potential-induced degradation (PID), in addition to a comparison of polarization-type PID...

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Detalles Bibliográficos
Autores principales: Yamaguchi, Seira, Jonai, Sachiko, Nakamura, Kyotaro, Marumoto, Kazuhiro, Ohshita, Yoshio, Masuda, Atsushi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2022
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9583327/
https://www.ncbi.nlm.nih.gov/pubmed/36278074
http://dx.doi.org/10.1021/acsomega.2c03866

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9583327/
https://www.ncbi.nlm.nih.gov/pubmed/36278074
http://dx.doi.org/10.1021/acsomega.2c03866

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