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MoS(2) oxidative etching caught in the act: formation of single (MoO(3))(n) molecules
We report the presence of sub-nm MoO(x) clusters formed on basal planes of the 2H MoS(2) crystals during thermal oxidative etching in air at a temperature of 370 °C. Using high resolution non-contact atomic force microscopy (AFM) we provide a histogram of their preferred heights. The AFM results com...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
RSC
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9595104/ https://www.ncbi.nlm.nih.gov/pubmed/36341303 http://dx.doi.org/10.1039/d2na00374k |