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MoS(2) oxidative etching caught in the act: formation of single (MoO(3))(n) molecules

We report the presence of sub-nm MoO(x) clusters formed on basal planes of the 2H MoS(2) crystals during thermal oxidative etching in air at a temperature of 370 °C. Using high resolution non-contact atomic force microscopy (AFM) we provide a histogram of their preferred heights. The AFM results com...

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Detalles Bibliográficos
Autores principales:	Sovizi, Saeed, Tosoni, Sergio, Szoszkiewicz, Robert
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	RSC 2022
Materias:	Chemistry
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9595104/ https://www.ncbi.nlm.nih.gov/pubmed/36341303 http://dx.doi.org/10.1039/d2na00374k

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