Superhigh energy storage density on-chip capacitors with ferroelectric Hf(0.5)Zr(0.5)O(2)/antiferroelectric Hf(0.25)Zr(0.75)O(2) bilayer nanofilms fabricated by plasma-enhanced atomic layer deposition

Thanks to their excellent compatibility with the complementary metal–oxide-semiconductor (CMOS) process, antiferroelectric (AFE) HfO(2)/ZrO(2)-based thin films have emerged as potential candidates for high-performance on-chip energy storage capacitors of miniaturized energy-autonomous systems. Howev...

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Detalles Bibliográficos
Autores principales: He, Yuli, Zheng, Guang, Wu, Xiaohan, Liu, Wen-Jun, Zhang, David Wei, Ding, Shi-Jin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: RSC 2022
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9595192/
https://www.ncbi.nlm.nih.gov/pubmed/36341289
http://dx.doi.org/10.1039/d2na00427e

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9595192/
https://www.ncbi.nlm.nih.gov/pubmed/36341289
http://dx.doi.org/10.1039/d2na00427e

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