Cargando…

Superhigh energy storage density on-chip capacitors with ferroelectric Hf(0.5)Zr(0.5)O(2)/antiferroelectric Hf(0.25)Zr(0.75)O(2) bilayer nanofilms fabricated by plasma-enhanced atomic layer deposition

Thanks to their excellent compatibility with the complementary metal–oxide-semiconductor (CMOS) process, antiferroelectric (AFE) HfO(2)/ZrO(2)-based thin films have emerged as potential candidates for high-performance on-chip energy storage capacitors of miniaturized energy-autonomous systems. Howev...

Descripción completa

Detalles Bibliográficos
Autores principales:	He, Yuli, Zheng, Guang, Wu, Xiaohan, Liu, Wen-Jun, Zhang, David Wei, Ding, Shi-Jin
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	RSC 2022
Materias:	Chemistry
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9595192/ https://www.ncbi.nlm.nih.gov/pubmed/36341289 http://dx.doi.org/10.1039/d2na00427e

Ejemplares similares

High Performance On-Chip Energy Storage Capacitors with Plasma-Enhanced Atomic Layer-Deposited Hf(0.5)Zr(0.5)O(2)/Al-Doped Hf(0.25)Zr(0.75)O(2) Nanofilms as Dielectrics
por: He, Yuli, et al.
Publicado: (2023)

Direct Epitaxial Growth of Polar Hf(0.5)Zr(0.5)O(2) Films on Corundum
por: Barriuso, Eduardo, et al.
Publicado: (2022)

Interface-engineered ferroelectricity of epitaxial Hf(0.5)Zr(0.5)O(2) thin films
por: Shi, Shu, et al.
Publicado: (2023)

Wake-Up Free Ultrathin Ferroelectric Hf(0.5)Zr(0.5)O(2) Films
por: Chouprik, Anastasia, et al.
Publicado: (2023)

Nanoscale Doping and Its Impact on the Ferroelectric and Piezoelectric Properties of Hf(0.5)Zr(0.5)O(2)
por: Chouprik, Anastasia, et al.
Publicado: (2022)

Improved Ferroelectric Properties in Hf(0.5)Zr(0.5)O(2) Thin Films by Microwave Annealing
por: Zhao, Biyao, et al.
Publicado: (2022)

Improved Endurance of Ferroelectric Hf(0.5)Zr(0.5)O(2) Using Laminated-Structure Interlayer
por: Chen, Meiwen, et al.
Publicado: (2023)

Mechanism of the Wake-Up and the Split-Up in AlO(x)/Hf(0.5)Zr(0.5)O(x) Film
por: Kim, Min-Jin, et al.
Publicado: (2023)

Ferroelectric Electroresistance after a Breakdown in Epitaxial Hf(0.5)Zr(0.5)O(2) Tunnel Junctions
por: Long, Xiao, et al.
Publicado: (2023)

Inductive crystallization effect of atomic-layer-deposited Hf(0.5)Zr(0.5)O(2) films for ferroelectric application
por: Zhang, Xun, et al.
Publicado: (2015)

Enhanced Unipolar Resistive Switching Characteristics of Hf(0.5)Zr(0.5)O(2) Thin Films with High ON/OFF Ratio
por: Wu, Zhipeng, et al.
Publicado: (2017)

Atomic Layer Deposited Hf(0.5)Zr(0.5)O(2)-based Flexible Memristor with Short/Long-Term Synaptic Plasticity
por: Wang, Tian-Yu, et al.
Publicado: (2019)

Effect of a ZrO(2) Seed Layer on an Hf(0.5)Zr(0.5)O(2) Ferroelectric Device Fabricated via Plasma Enhanced Atomic Layer Deposition
por: Song, Ji-Na, et al.
Publicado: (2023)

Memory Window and Endurance Improvement of Hf(0.5)Zr(0.5)O(2)-Based FeFETs with ZrO(2) Seed Layers Characterized by Fast Voltage Pulse Measurements
por: Xiao, Wenwu, et al.
Publicado: (2019)

Ferroelectric-Antiferroelectric Transition of Hf(1–x)Zr(x)O(2) on Indium Arsenide with Enhanced Ferroelectric Characteristics for Hf(0.2)Zr(0.8)O(2)
por: Dahlberg, Hannes, et al.
Publicado: (2022)

Characteristics of Hf(0.5)Zr(0.5)O(2) Thin Films Prepared by Direct and Remote Plasma Atomic Layer Deposition for Application to Ferroelectric Memory
por: Hong, Da Hee, et al.
Publicado: (2023)

Cycling Waveform Dependent Wake-Up and ON/OFF Ratio in Al(2)O(3)/Hf(0.5)Zr(0.5)O(2) Ferroelectric Tunnel Junction Devices
por: Shajil Nair, Keerthana, et al.
Publicado: (2023)

Effect of Process Temperature on Density and Electrical Characteristics of Hf(0.5)Zr(0.5)O(2) Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
por: Kim, Hak-Gyeong, et al.
Publicado: (2022)

Low-Temperature Sintering of Bi(Ni(0.5)Ti(0.5))O(3)-BiFeO(3)-Pb(Zr(0.5)Ti(0.5))O(3) Ceramics and Their Performance
por: Wang, Wuyang, et al.
Publicado: (2023)

Antiferroelectrics and Magnetoresistance in La(0.5)Sr(0.5)Fe(12)O(19) Multiferroic System
por: Yin, Jia-Hang, et al.
Publicado: (2023)

A Comprehensive Study on the Effect of TiN Top and Bottom Electrodes on Atomic Layer Deposited Ferroelectric Hf(0.5)Zr(0.5)O(2) Thin Films
por: Kim, Si Joon, et al.
Publicado: (2020)

Ti Addition Effect on the Grain Structure Evolution and Thermoelectric Transport Properties of Hf(0.5)Zr(0.5)NiSn(0.98)Sb(0.02) Half-Heusler Alloy
por: Cho, Junsang, et al.
Publicado: (2021)

High-Performance Limiting Current Oxygen Sensor Comprised of Highly Active La(0.75)Sr(0.25)Cr(0.5)Mn(0.5)O(3) Electrode
por: Zou, Jie, et al.
Publicado: (2018)

A Comparative Study on the Ferroelectric Performances in Atomic Layer Deposited Hf(0.5)Zr(0.5)O(2) Thin Films Using Tetrakis(ethylmethylamino) and Tetrakis(dimethylamino) Precursors
por: Kim, Baek Su, et al.
Publicado: (2020)

Theoretical study on structural and mechanical properties of Si-containing ternary transition metal nitrides M(0.5)Si(0.5)N (M = Ti, Zr, Hf)
por: Chen, Lei, et al.
Publicado: (2023)

Ultrahigh Energy Storage Properties in (Sr(0.7)Bi(0.2))TiO(3)-Bi(Mg(0.5)Zr(0.5))O(3) Lead-Free Ceramics and Potential for High-Temperature Capacitors
por: Kong, Xi, et al.
Publicado: (2020)

Microstructural Design of Ba(0.5)La(0.5)Co(0.5)Fe(0.5)O(3) Perovskite Ceramics
por: Gierszewska, Daria, et al.
Publicado: (2021)

Nanostructured La(0.75)Sr(0.25)Cr(0.5)Mn(0.5)O(3)–Ce(0.8)Sm(0.2)O(2) Heterointerfaces as All-Ceramic Functional Layers for Solid Oxide Fuel Cell Applications
por: Sirvent, Juan de Dios, et al.
Publicado: (2022)

Ferrimagnetic Ordering and Spin-Glass State in Diluted GdFeO(3)-Type Perovskites (Lu(0.5)Mn(0.5))(Mn(1−x)Ti(x))O(3) with x = 0.25, 0.50, and 0.75
por: Belik, Alexei A., et al.
Publicado: (2023)

Exchange bias effect in polycrystalline Bi(0.5)Sr(0.5)Fe(0.5)Cr(0.5)O(3) bulk
por: Li, S. Z., et al.
Publicado: (2023)

Enhanced Antioxidant Ability of PEG-Coated Ce(0.5)Zr(0.5)O(2)-Based Nanofluids for Scavenging Hydroxyl Radicals
por: Rai, Nandani, et al.
Publicado: (2022)

Crystal chemistry and compressibility of Fe(0.5)Mg(0.5)Al(0.5)Si(0.5)O(3) and FeMg(0.5)Si(0.5)O(3) silicate perovskites at pressures up to 95 GPa
por: Koemets, Iuliia, et al.
Publicado: (2023)

Anisotropic Properties of Epitaxial Ferroelectric Lead-Free 0.5[Ba(Ti(0.8)Zr(0.2))O(3)]-0.5(Ba(0.7)Ca(0.3))TiO(3) Films
por: Cucciniello, Nicholas, et al.
Publicado: (2023)

Structural Insight into La(0.5)Ca(0.5)Mn(0.5)Co(0.5)O(3) Decomposition in the Methane Combustion Process
por: Nikolaeva, Olga, et al.
Publicado: (2021)

Ultrahigh Power Factor in Thermoelectric System Nb(0.95)M(0.05)FeSb (M = Hf, Zr, and Ti)
por: Ren, Wuyang, et al.
Publicado: (2018)

Ti insertion in the MTe(5) (M = Zr, Hf) structure type: Hf(0.78)Ti(0.22)Te(5)
por: Yu, Jaemin, et al.
Publicado: (2012)

Analogous Anti-Ferroelectricity in Y(2)O(3)-Coated (Pb(0.92)Sr(0.05)La(0.02))(Zr(0.7)Sn(0.25)Ti(0.05))O(3) Ceramics and Their Energy-Storage Performance
por: Fang, Bijun, et al.
Publicado: (2019)

Effect of Poling on Multicatalytic Performance of 0.5Ba(Zr(0.2)Ti(0.8))O(3)-0.5(Ba(0.7)Sr(0.3))TiO(3) Ferroelectric Ceramic for Dye Degradation
por: Gaur, Akshay, et al.
Publicado: (2022)

Influence of Grain Size on Dielectric Behavior in Lead-Free 0.5 Ba(Zr(0.2)Ti(0.8))O(3)–0.5 (Ba(0.7)Ca(0.3))TiO(3) Ceramics
por: Ene, Vladimir Lucian, et al.
Publicado: (2023)

The structural, DC resistivity and magnetic properties of Zr and Co co-substituted Ni(0.5)Zn(0.5)Fe(2)O(4)
por: Jalaiah, K., et al.
Publicado: (2019)

Cannot write session to /tmp/vufind_sessions/sess_dlt4com0ucmf0edntjkhno2i0m