Bipolar Switching Characteristics of Transparent WO(X)-Based RRAM for Synaptic Application and Neuromorphic Engineering

In this work, we evaluate the resistive switching (RS) and synaptic characteristics of a fully transparent resistive random-access memory (T-RRAM) device based on indium-tin-oxide (ITO) electrodes. Here, we fabricated ITO/WO(X)/ITO capacitor structure and incorporated DC-sputtered WO(X) as the switc...

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Detalles Bibliográficos
Autores principales: Kim, Jihyung, Park, Jongmin, Kim, Sungjun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9605663/
https://www.ncbi.nlm.nih.gov/pubmed/36295253
http://dx.doi.org/10.3390/ma15207185

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9605663/
https://www.ncbi.nlm.nih.gov/pubmed/36295253
http://dx.doi.org/10.3390/ma15207185

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