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Bipolar Switching Characteristics of Transparent WO(X)-Based RRAM for Synaptic Application and Neuromorphic Engineering

In this work, we evaluate the resistive switching (RS) and synaptic characteristics of a fully transparent resistive random-access memory (T-RRAM) device based on indium-tin-oxide (ITO) electrodes. Here, we fabricated ITO/WO(X)/ITO capacitor structure and incorporated DC-sputtered WO(X) as the switc...

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Detalles Bibliográficos
Autores principales:	Kim, Jihyung, Park, Jongmin, Kim, Sungjun
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2022
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9605663/ https://www.ncbi.nlm.nih.gov/pubmed/36295253 http://dx.doi.org/10.3390/ma15207185

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