Investigation of the Temperature Effect on Electrical Characteristics of Al/SiO(2)/n++-Si RRAM Devices

In this work, we investigate the effect of temperature on the electrical characteristics of Al/SiO(2)/n++-Si RRAM devices. We study the electroforming process and show that forming voltage and time-to-breakdown are well described by Weibull distribution. Experimental current–voltage characteristics...

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Detalles Bibliográficos
Autores principales: Wiśniewski, Piotr, Nieborek, Mateusz, Mazurak, Andrzej, Jasiński, Jakub
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9606867/
https://www.ncbi.nlm.nih.gov/pubmed/36295994
http://dx.doi.org/10.3390/mi13101641

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9606867/
https://www.ncbi.nlm.nih.gov/pubmed/36295994
http://dx.doi.org/10.3390/mi13101641

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