Investigation of the Temperature Effect on Electrical Characteristics of Al/SiO(2)/n++-Si RRAM Devices

In this work, we investigate the effect of temperature on the electrical characteristics of Al/SiO(2)/n++-Si RRAM devices. We study the electroforming process and show that forming voltage and time-to-breakdown are well described by Weibull distribution. Experimental current–voltage characteristics...

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Detalles Bibliográficos
Autores principales: Wiśniewski, Piotr, Nieborek, Mateusz, Mazurak, Andrzej, Jasiński, Jakub
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9606867/
https://www.ncbi.nlm.nih.gov/pubmed/36295994
http://dx.doi.org/10.3390/mi13101641
Descripción
Sumario:In this work, we investigate the effect of temperature on the electrical characteristics of Al/SiO(2)/n++-Si RRAM devices. We study the electroforming process and show that forming voltage and time-to-breakdown are well described by Weibull distribution. Experimental current–voltage characteristics of Al-SiO(2)-(n++Si) structures are presented and discussed at different temperatures. We show that some intermediate resistance states can be observed at higher temperatures. In our analysis, we identify Space Charge Limited Conduction (SCLC) as the dominating transport mechanism regardless of the operating temperature.

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