Investigation of the Temperature Effect on Electrical Characteristics of Al/SiO(2)/n++-Si RRAM Devices

In this work, we investigate the effect of temperature on the electrical characteristics of Al/SiO(2)/n++-Si RRAM devices. We study the electroforming process and show that forming voltage and time-to-breakdown are well described by Weibull distribution. Experimental current–voltage characteristics...

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Autores principales: Wiśniewski, Piotr, Nieborek, Mateusz, Mazurak, Andrzej, Jasiński, Jakub
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9606867/
https://www.ncbi.nlm.nih.gov/pubmed/36295994
http://dx.doi.org/10.3390/mi13101641
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author Wiśniewski, Piotr
Nieborek, Mateusz
Mazurak, Andrzej
Jasiński, Jakub
author_facet Wiśniewski, Piotr
Nieborek, Mateusz
Mazurak, Andrzej
Jasiński, Jakub
author_sort Wiśniewski, Piotr
collection PubMed
description In this work, we investigate the effect of temperature on the electrical characteristics of Al/SiO(2)/n++-Si RRAM devices. We study the electroforming process and show that forming voltage and time-to-breakdown are well described by Weibull distribution. Experimental current–voltage characteristics of Al-SiO(2)-(n++Si) structures are presented and discussed at different temperatures. We show that some intermediate resistance states can be observed at higher temperatures. In our analysis, we identify Space Charge Limited Conduction (SCLC) as the dominating transport mechanism regardless of the operating temperature.
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spelling pubmed-96068672022-10-28 Investigation of the Temperature Effect on Electrical Characteristics of Al/SiO(2)/n++-Si RRAM Devices Wiśniewski, Piotr Nieborek, Mateusz Mazurak, Andrzej Jasiński, Jakub Micromachines (Basel) Article In this work, we investigate the effect of temperature on the electrical characteristics of Al/SiO(2)/n++-Si RRAM devices. We study the electroforming process and show that forming voltage and time-to-breakdown are well described by Weibull distribution. Experimental current–voltage characteristics of Al-SiO(2)-(n++Si) structures are presented and discussed at different temperatures. We show that some intermediate resistance states can be observed at higher temperatures. In our analysis, we identify Space Charge Limited Conduction (SCLC) as the dominating transport mechanism regardless of the operating temperature. MDPI 2022-09-29 /pmc/articles/PMC9606867/ /pubmed/36295994 http://dx.doi.org/10.3390/mi13101641 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Wiśniewski, Piotr
Nieborek, Mateusz
Mazurak, Andrzej
Jasiński, Jakub
Investigation of the Temperature Effect on Electrical Characteristics of Al/SiO(2)/n++-Si RRAM Devices
title Investigation of the Temperature Effect on Electrical Characteristics of Al/SiO(2)/n++-Si RRAM Devices
title_full Investigation of the Temperature Effect on Electrical Characteristics of Al/SiO(2)/n++-Si RRAM Devices
title_fullStr Investigation of the Temperature Effect on Electrical Characteristics of Al/SiO(2)/n++-Si RRAM Devices
title_full_unstemmed Investigation of the Temperature Effect on Electrical Characteristics of Al/SiO(2)/n++-Si RRAM Devices
title_short Investigation of the Temperature Effect on Electrical Characteristics of Al/SiO(2)/n++-Si RRAM Devices
title_sort investigation of the temperature effect on electrical characteristics of al/sio(2)/n++-si rram devices
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9606867/
https://www.ncbi.nlm.nih.gov/pubmed/36295994
http://dx.doi.org/10.3390/mi13101641
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