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Criterion for Selective Area Growth of III-V Nanowires
A model for the nucleation of vertical or planar III-V nanowires (NWs) in selective area growth (SAG) on masked substrates with regular arrays of openings is developed. The optimal SAG zone, with NW nucleation within the openings and the absence of parasitic III-V crystallites or group III droplets...
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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MDPI
2022
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9606971/ https://www.ncbi.nlm.nih.gov/pubmed/36296889 http://dx.doi.org/10.3390/nano12203698 |