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Criterion for Selective Area Growth of III-V Nanowires

A model for the nucleation of vertical or planar III-V nanowires (NWs) in selective area growth (SAG) on masked substrates with regular arrays of openings is developed. The optimal SAG zone, with NW nucleation within the openings and the absence of parasitic III-V crystallites or group III droplets...

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Detalles Bibliográficos
Autor principal:	Dubrovskii, Vladimir G.
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2022
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9606971/ https://www.ncbi.nlm.nih.gov/pubmed/36296889 http://dx.doi.org/10.3390/nano12203698

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