Cargando…

Criterion for Selective Area Growth of III-V Nanowires

A model for the nucleation of vertical or planar III-V nanowires (NWs) in selective area growth (SAG) on masked substrates with regular arrays of openings is developed. The optimal SAG zone, with NW nucleation within the openings and the absence of parasitic III-V crystallites or group III droplets...

Descripción completa

Detalles Bibliográficos
Autor principal:	Dubrovskii, Vladimir G.
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2022
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9606971/ https://www.ncbi.nlm.nih.gov/pubmed/36296889 http://dx.doi.org/10.3390/nano12203698

Ejemplares similares

Evolution of the Length and Radius of Catalyst-Free III–V Nanowires Grown by Selective Area Epitaxy
por: Dubrovskii, Vladimir G.
Publicado: (2019)

Theory of MOCVD Growth of III-V Nanowires on Patterned Substrates
por: Dubrovskii, Vladimir G.
Publicado: (2022)

Modeling the Radial Growth of Self-Catalyzed III-V Nanowires
por: Dubrovskii, Vladimir G., et al.
Publicado: (2022)

Modeling Catalyst-Free Growth of III-V Nanowires: Empirical and Rigorous Approaches
por: Dubrovskii, Vladimir G.
Publicado: (2023)

Composition of Vapor–Liquid–Solid III–V Ternary Nanowires Based on Group-III Intermix
por: Dubrovskii, Vladimir G.
Publicado: (2023)

Thermodynamics of the Vapor–Liquid–Solid Growth of Ternary III–V Nanowires in the Presence of Silicon
por: Hijazi, Hadi, et al.
Publicado: (2021)

An Overview of Modeling Approaches for Compositional Control in III–V Ternary Nanowires
por: Leshchenko, Egor D., et al.
Publicado: (2023)

Theory of MBE Growth of Nanowires on Reflecting Substrates
por: Dubrovskii, Vladimir G.
Publicado: (2022)

Reconsideration of Nanowire Growth Theory at Low Temperatures
por: Dubrovskii, Vladimir G.
Publicado: (2021)

Can Nanowires Coalesce?
por: Dubrovskii, Vladimir G.
Publicado: (2023)

Theory of MBE Growth of Nanowires on Adsorbing Substrates: The Role of the Shadowing Effect on the Diffusion Transport
por: Dubrovskii, Vladimir G.
Publicado: (2022)

Dynamics of Monolayer Growth in Vapor–Liquid–Solid GaAs Nanowires Based on Surface Energy Minimization
por: Hijazi, Hadi, et al.
Publicado: (2021)

Fundamental aspects to localize self-catalyzed III-V nanowires on silicon
por: Vukajlovic-Plestina, J., et al.
Publicado: (2019)

Selective Area Epitaxy of GaN Nanowires on Si Substrates Using Microsphere Lithography: Experiment and Theory
por: Gridchin, Vladislav O., et al.
Publicado: (2022)

Oscillations of As Concentration and Electron-to-Hole Ratio in Si-Doped GaAs Nanowires
por: Dubrovskii, Vladimir G., et al.
Publicado: (2020)

Kinetics of Guided Growth of Horizontal GaN Nanowires on Flat and Faceted Sapphire Surfaces
por: Rothman, Amnon, et al.
Publicado: (2021)

Growth of Self-Catalyzed InAs/InSb Axial Heterostructured Nanowires: Experiment and Theory
por: Arif, Omer, et al.
Publicado: (2020)

Geometrical Selection of GaN Nanowires Grown by Plasma-Assisted MBE on Polycrystalline ZrN Layers
por: Olszewski, Karol, et al.
Publicado: (2023)

Growth Mechanism of Self-Catalyzed Group III−V Nanowires
por: Mandl, Bernhard, et al.
Publicado: (2010)

Limits of III–V Nanowire Growth Based on Droplet Dynamics
por: Tornberg, Marcus, et al.
Publicado: (2020)

From Layer-by-Layer Growth to Nanoridge Formation: Selective Area Epitaxy of GaAs by MOVPE
por: Morgan, Nicholas, et al.
Publicado: (2023)

Growth of Inclined GaAs Nanowires by Molecular Beam Epitaxy: Theory and Experiment
por: Zhang, X, et al.
Publicado: (2010)

Au-Seeded Growth of Vertical and in-Plane III–V Nanowires on Graphite Substrates
por: Wallentin, Jesper, et al.
Publicado: (2014)

Direct Growth of Light-Emitting III–V Nanowires on Flexible Plastic Substrates
por: Khayrudinov, Vladislav, et al.
Publicado: (2020)

Epitaxial growth of crystal phase quantum dots in III–V semiconductor nanowires
por: Lozano, Miguel Sinusia, et al.
Publicado: (2023)

Failure criterion of silver nanowire electrodes on a polymer substrate for highly flexible devices
por: Kim, Donggyun, et al.
Publicado: (2017)

Selectivity Map for Molecular Beam Epitaxy of Advanced III–V Quantum Nanowire Networks
por: Aseev, Pavel, et al.
Publicado: (2018)

Cryogenic multiplexing using selective area grown nanowires
por: Olšteins, Dāgs, et al.
Publicado: (2023)

Area-Selective, In-Situ Growth of Pd-Modified ZnO Nanowires on MEMS Hydrogen Sensors
por: Hu, Jiahao, et al.
Publicado: (2022)

Sufficient criterion for a cone to be area-minimizing
por: Lawlor, Gary R
Publicado: (1991)

New Criterion for Nonoscillating High-Energy Behavior. III
por: Gervais, Jean-Loup, et al.
Publicado: (1970)

Evaluation criterion for response to selection with constraint
por: Satoh, Masahiro
Publicado: (2019)

Surface Nano-Patterning for the Bottom-Up Growth of III-V Semiconductor Nanowire Ordered Arrays
por: Demontis, Valeria, et al.
Publicado: (2021)

Role of Thermodynamics and Kinetics in the Composition of Ternary III-V Nanowires
por: Leshchenko, Egor D., et al.
Publicado: (2020)

Fully in situ Nb/InAs-nanowire Josephson junctions by selective-area growth and shadow evaporation
por: Perla, Pujitha, et al.
Publicado: (2021)

III–V nanowires on black silicon and low-temperature growth of self-catalyzed rectangular InAs NWs
por: Haggren, Tuomas, et al.
Publicado: (2018)

Performance of Akaike Information Criterion and Bayesian Information Criterion in Selecting Partition Models and Mixture Models
por: Liu, Qin, et al.
Publicado: (2022)

Initialization of Nanowire or Cluster Growth Critically Controlled by the Effective V/III Ratio at the Early Nucleation Stage
por: Chen, Chen, et al.
Publicado: (2023)

High-speed III-V nanowire photodetector monolithically integrated on Si
por: Mauthe, Svenja, et al.
Publicado: (2020)

Coherent Hole Transport in Selective Area Grown Ge Nanowire Networks
por: Ramanandan, Santhanu Panikar, et al.
Publicado: (2022)

Cannot write session to /tmp/vufind_sessions/sess_2d87tfh1l2uotuunu2utb4vi8c