Multiple Resistive Switching Mechanisms in Graphene Oxide-Based Resistive Memory Devices

Among the different graphene derivatives, graphene oxide is the most intensively studied material as it exhibits reliable and repeatable resistive switching. The operative mechanisms that are responsible for resistive switching are being intensively investigated, and three models explaining the chan...

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Detalles Bibliográficos
Autores principales: Koveshnikov, Sergei, Kononenko, Oleg, Soltanovich, Oleg, Kapitanova, Olesya, Knyazev, Maxim, Volkov, Vladimir, Yakimov, Eugene
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9607345/
https://www.ncbi.nlm.nih.gov/pubmed/36296817
http://dx.doi.org/10.3390/nano12203626

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9607345/
https://www.ncbi.nlm.nih.gov/pubmed/36296817
http://dx.doi.org/10.3390/nano12203626

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