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Multiple Resistive Switching Mechanisms in Graphene Oxide-Based Resistive Memory Devices

Among the different graphene derivatives, graphene oxide is the most intensively studied material as it exhibits reliable and repeatable resistive switching. The operative mechanisms that are responsible for resistive switching are being intensively investigated, and three models explaining the chan...

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Autores principales: Koveshnikov, Sergei, Kononenko, Oleg, Soltanovich, Oleg, Kapitanova, Olesya, Knyazev, Maxim, Volkov, Vladimir, Yakimov, Eugene
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9607345/
https://www.ncbi.nlm.nih.gov/pubmed/36296817
http://dx.doi.org/10.3390/nano12203626
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author Koveshnikov, Sergei
Kononenko, Oleg
Soltanovich, Oleg
Kapitanova, Olesya
Knyazev, Maxim
Volkov, Vladimir
Yakimov, Eugene
author_facet Koveshnikov, Sergei
Kononenko, Oleg
Soltanovich, Oleg
Kapitanova, Olesya
Knyazev, Maxim
Volkov, Vladimir
Yakimov, Eugene
author_sort Koveshnikov, Sergei
collection PubMed
description Among the different graphene derivatives, graphene oxide is the most intensively studied material as it exhibits reliable and repeatable resistive switching. The operative mechanisms that are responsible for resistive switching are being intensively investigated, and three models explaining the change in the resistive states have been developed. These models are grounded in the metallic-like filamentary conduction, contact resistance modification and the oxidation of/reduction in the graphene oxide bulk. In this work, using Al/GO/n-Si structures, we demonstrate that all three of these operative mechanisms can simultaneously participate in the resistive switching of graphene oxide. Multiple point-like conduction channels in the graphene oxide films were detected by the electron beam-induced current (EBIC) technique. At the same time, large areas with increased conductivity were also revealed by EBIC. An analysis of these areas by Raman spectroscopy indicates the change in the graphene oxide bulk’s resistive properties. The EBIC data along with the measurements of the capacitance–voltage characteristics provided strong evidence of the involvement of an aluminum/graphene oxide interface in the switching processes. In addition, by using Al/GO/n-Si structures, we were able to identify unique local properties of the formed conductive channels, namely the change of the charge state of a conductive channel due to the creation of negatively charged traps and/or an increase in the GO work function.
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spelling pubmed-96073452022-10-28 Multiple Resistive Switching Mechanisms in Graphene Oxide-Based Resistive Memory Devices Koveshnikov, Sergei Kononenko, Oleg Soltanovich, Oleg Kapitanova, Olesya Knyazev, Maxim Volkov, Vladimir Yakimov, Eugene Nanomaterials (Basel) Article Among the different graphene derivatives, graphene oxide is the most intensively studied material as it exhibits reliable and repeatable resistive switching. The operative mechanisms that are responsible for resistive switching are being intensively investigated, and three models explaining the change in the resistive states have been developed. These models are grounded in the metallic-like filamentary conduction, contact resistance modification and the oxidation of/reduction in the graphene oxide bulk. In this work, using Al/GO/n-Si structures, we demonstrate that all three of these operative mechanisms can simultaneously participate in the resistive switching of graphene oxide. Multiple point-like conduction channels in the graphene oxide films were detected by the electron beam-induced current (EBIC) technique. At the same time, large areas with increased conductivity were also revealed by EBIC. An analysis of these areas by Raman spectroscopy indicates the change in the graphene oxide bulk’s resistive properties. The EBIC data along with the measurements of the capacitance–voltage characteristics provided strong evidence of the involvement of an aluminum/graphene oxide interface in the switching processes. In addition, by using Al/GO/n-Si structures, we were able to identify unique local properties of the formed conductive channels, namely the change of the charge state of a conductive channel due to the creation of negatively charged traps and/or an increase in the GO work function. MDPI 2022-10-16 /pmc/articles/PMC9607345/ /pubmed/36296817 http://dx.doi.org/10.3390/nano12203626 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Koveshnikov, Sergei
Kononenko, Oleg
Soltanovich, Oleg
Kapitanova, Olesya
Knyazev, Maxim
Volkov, Vladimir
Yakimov, Eugene
Multiple Resistive Switching Mechanisms in Graphene Oxide-Based Resistive Memory Devices
title Multiple Resistive Switching Mechanisms in Graphene Oxide-Based Resistive Memory Devices
title_full Multiple Resistive Switching Mechanisms in Graphene Oxide-Based Resistive Memory Devices
title_fullStr Multiple Resistive Switching Mechanisms in Graphene Oxide-Based Resistive Memory Devices
title_full_unstemmed Multiple Resistive Switching Mechanisms in Graphene Oxide-Based Resistive Memory Devices
title_short Multiple Resistive Switching Mechanisms in Graphene Oxide-Based Resistive Memory Devices
title_sort multiple resistive switching mechanisms in graphene oxide-based resistive memory devices
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9607345/
https://www.ncbi.nlm.nih.gov/pubmed/36296817
http://dx.doi.org/10.3390/nano12203626
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