Germanium-Tin (GeSn) Metal-Semiconductor-Metal (MSM) Near-Infrared Photodetectors

Narrow-bandgap germanium–tin (GeSn) is employed to fabricate metal–semiconductor–metal (MSM) near-infrared photodetectors with low-dark currents and high responsivity. To reduce the dark current, the SiO(2) layer is inserted in between the metal and semiconductor to increase the barrier height, albe...

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Detalles Bibliográficos
Autores principales: Chuang, Ricky Wenkuei, Huang, Yu-Hsin, Tsai, Tsung-Han
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9607407/
https://www.ncbi.nlm.nih.gov/pubmed/36296088
http://dx.doi.org/10.3390/mi13101733

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9607407/
https://www.ncbi.nlm.nih.gov/pubmed/36296088
http://dx.doi.org/10.3390/mi13101733

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